T.N. Nguyen, D.L. Harame, et al.
IEDM 1985
The correlation of Schottky-barrier height and microstructure has been investigated with three types of epitaxial Ni silicides, type-A and -B NiSi2 and NiSi, on Si(111) substrates. All these interfaces can be formed to yield a barrier height of 0.78 eV. This high barrier was obtained only for near-perfect interfaces; otherwise-less-perfect silicides yielded low barrier heights of 0.66 eV. This barrier height is controlled primarily by the structural perfection of the interface rather than by the specific type of epitaxy. © 1985 The American Physical Society.
T.N. Nguyen, D.L. Harame, et al.
IEDM 1985
M. Liehr, P.A. Thiry
Journal of Electron Spectroscopy and Related Phenomena
F. Legoues, M. Liehr, et al.
Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
E.A. Stach, R. Hull, et al.
Journal of Applied Physics