Correlation of Schottky-barrier height and microstructure in the epitaxial Ni silicide on Si(111)

Abstract

The correlation of Schottky-barrier height and microstructure has been investigated with three types of epitaxial Ni silicides, type-A and -B NiSi2 and NiSi, on Si(111) substrates. All these interfaces can be formed to yield a barrier height of 0.78 eV. This high barrier was obtained only for near-perfect interfaces; otherwise-less-perfect silicides yielded low barrier heights of 0.66 eV. This barrier height is controlled primarily by the structural perfection of the interface rather than by the specific type of epitaxy. © 1985 The American Physical Society.