PaperPerformance comparisons of III-V and strained-Si in planar FETs and nonplanar FinFETs at ultrashort gate length (12 nm)Seung Hyun Park, Yang Liu, et al.IEEE T-ED
PaperOn the interpretation of ballistic injection velocity in deeply scaled MOSFETsYang Liu, Mathieu Luisier, et al.IEEE T-ED
PaperTemperature dependence of the transconductance in ballistic III-V QWFETsYang Liu, Mathieu Luisier, et al.IEEE T-ED
PosterLarge scale density estimation with polynomial expansions and Johnson-Lindenstrauss transformationsAleksandros Sobczyk, Teodoro Laino, et al.ACS Fall 2022
