PaperOn the interpretation of ballistic injection velocity in deeply scaled MOSFETsYang Liu, Mathieu Luisier, et al.IEEE T-ED
PaperPhysical modeling of HZO-based ferroelectric field-effect transistors with a WO x channelXin Wen, Mattia Halter, et al.Frontiers in Nanotechnology
PaperOn the interpretation of ballistic injection velocity in deeply scaled MOSFETsYang Liu, Mathieu Luisier, et al.IEEE T-ED
Conference paperAnalysis of Si, InAs, and Si-InAs tunnel diodes and tunnel FETs using different transport modelsAndreas Schenk, Reto Rhyner, et al.SISPAD 2011
