Publication
VLSI-TSA 1997
Conference paper
Copper interconnect: Fabrication and reliability
Abstract
The materials, processes, and reliability issues in the development of multi-level Cu chip interconnections are described. Prototype four-level Cu/polyimide structures have been fabricated by using a damascene process which maintains planarity at each level. Electromigration lifetime for two-level Cu interconnections is found to be longer than that of Al(Cu) while having approximately twice the conductivity.