Publication
VLSI-TSA 1997
Conference paper

Copper interconnect: Fabrication and reliability

Abstract

The materials, processes, and reliability issues in the development of multi-level Cu chip interconnections are described. Prototype four-level Cu/polyimide structures have been fabricated by using a damascene process which maintains planarity at each level. Electromigration lifetime for two-level Cu interconnections is found to be longer than that of Al(Cu) while having approximately twice the conductivity.

Date

Publication

VLSI-TSA 1997

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