Rudolf M. Tromp
Ultramicroscopy
We describe a process for the growth of a single, electronically decoupled graphene layer on SiC(0001). The method involves annealing in disilane to (1) prepare flat, clean substrates, (2) grow a single graphene layer, and (3) electronically decouple the graphene from the substrate. This approach uses a single process gas, at μTorr pressures, with modest substrate temperatures, thus affecting a drastic simplification over other processes described in the literature. © 2014 AIP Publishing LLC.
Rudolf M. Tromp
Ultramicroscopy
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Nano Letters
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IEDM 2011
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Ultramicroscopy