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Publication
MRS Spring Meeting 2006
Conference paper
Control of interfacial structure and electrical properties in MBE grown single crystalline SrTiO3 gate dielectrics on Si(100)
Abstract
We review the evolution in interface structure and its impact on electrical properties during the different stages of the growth process of single crystalline SrTiO3/(Ba,Sr)O gate dielectrics on Si(100): Sr barrier synthesis, (Ba,Sr)O template growth, SrTiO3 deposition and recrystallization, and atomic oxygen annealing. Using an optimized deposition scheme, we obtain a metal-insulator-semiconductor capacitance equivalent to 0.5 nm of SiO2 for a 10 unit cell SrTiO3/l unit cell (Ba,Sr)O/p-Si(100) stack. © 2006 Materials Research Society.