Conference paper
Growth kinetics of si and ge nanowires
S. Kodambaka, J. Tersoff, et al.
SPIE OPTO 2009
We describe a technique for the homoepitaxial growth of epitaxial, faceted Si islands on Si(001), consisting of predeposition of Ga surfactant followed by ultrahigh vacuum chemical vapor deposition (CVD) of Si. Ga-mediated Si CVD leads to the formation of Si islands exhibiting {113} and {102} facets. Surfactant-mediated CVD is shown to provide a new degree of freedom for the production of nanoscale structures without lithography. © 2008 American Institute of Physics.
S. Kodambaka, J. Tersoff, et al.
SPIE OPTO 2009
R.M. Tromp, M.C. Reuter
Physical Review Letters
M. Copel, M.C. Reuter, et al.
Physical Review B
S. Kodambaka, J. Tersoff, et al.
Microscopy and Microanalysis