Control Of Coercivity In NiFe Films For Single-Level Masking Bubble Devices

Methods of reducing Hc in thick NiFe films deposited on evaporated Au have been studied for applications in conductor-first single-level masking bubble device fabrication. Results obtained using surface modification techniques, such as ion implantation, plasma etching, and semiconducting intermediate layers (TiOx) are described. In addition, the performance of actual 5-μm and 2-μm devices is discussed. Copyright © 1979 by The Institute of Electrical and Electronics Engineers, Inc.