F. Fang, A.B. Fowler, et al.
Surface Science
Conductance has been studied in metal-oxide-silicon field-effect transistor accumulation-layer samples in which it is possible to constrict the channel to small dimensions both perpendicular to the surface and perpendicular to the channel. A temperature-dependent conductance σ=σ0exp[-(T0T)n] is observed, where n=12 for small channel widths and n=13 for larger channel widths. It is believed that this behavior arises from a transition from one-dimensional to two-dimensional variable-range hopping in the sample. © 1982 The American Physical Society.
F. Fang, A.B. Fowler, et al.
Surface Science
S. Washburn, A.B. Fowler, et al.
Physical Review Letters
F. Fang, A.B. Fowler, et al.
Surface Science
Dragana Popovic, A.B. Fowler, et al.
Physical Review Letters