R.F. Broom, P. Wolf
Physical Review B
The electrical properties of f.e.t.s with submicrometre gates are investigated by means of a 2-dimensional computer model. It is found that the gain-bandwidth product increases with decreasing gate length and reaches a value of 70 GHz for 0.1 um gates. This improvement is, however, at the expense of open-circuit voltage gain. A practical limit of the gate length for useful devices is found to be about 0.1 um. © 1972, The Institution of Electrical Engineers. All rights reserved.
R.F. Broom, P. Wolf
Physical Review B
E.O. Schulz-DuBois, P. Wolf
Applied Physics
W. Baechtold, P. Wolf
Solid-State Electronics
Heinz Jaeckel, Volker Graf, et al.
IEEE Electron Device Letters