A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Vacancy jumps in a bicrystal model of Σ = 5 (36.9°) [001] tilt boundary in aluminum have been observed at temperatures between 700 and 800 K by means of molecular dynamics simulation. Preliminary results indicated considerable structure dependence and yielded an activation energy for vacancy migration of 0.38 eV. In contrast to a previous study of vacancy migration in a bcc tilt boundary, thermal activation of a boundary interstitial by Frenkel pair production was not observed. © 1984.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
Mitsuru Ueda, Hideharu Mori, et al.
Journal of Polymer Science Part A: Polymer Chemistry