L.T. Shi, K.N. Tu
Applied Physics Letters
Volterra edge dislocations were introduced in an amorphous Lennard-Jones model. By application of suitable boundary conditions, equivalent to a shear stress, a recognizable step with a shape of a double-headed asymptote was formed on the other side of the amorphous solid. This suggests that atomic transport via dislocation motion can occur and could be the mechanism of shear-band formation in real amorphous materials. © 1983 The American Physical Society.
L.T. Shi, K.N. Tu
Applied Physics Letters
Huiling Shang, J. Rubino, et al.
VLSI Technology 2005
L.T. Shi, W. Krakow
Physical Review B
R. Feder, P. Chaudhari
Wear