Comparison of annealing and ion implantation effects during solid state disilicide formation

Abstract

Arsenic ions were implanted through a molybdenum-tungsten bilayer film into the underlying silicon substrate to a dose of 2×1016 ions/cm2. The implantation causes the formation of two superimposed silicide layers, respectively MoSi2 and WSi2, with the metal atoms showing little tendency to any intermixing. These results are compared with the observations made on similar samples when the silicides were formed through ordinary heat treatment.