R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
A tunneling pair recombination model has been proposed to describe the themostimulated luminescence in an earlier paper (1). Under the same concept but assuming two tunneling levels for the electron trap, a description of phosphorescence decay (PP via one tunneling level) and photostimulated luminescence (PSL via a second tunneling level) is presented. Experimental results on PP and PSL for manganese-doped silicates with and without arsenic codoping are reported. A novel method of comparing PP and PSL in the temperature and time domain leads to the determination of energy values of the tunneling states. © 1983, The Electrochemical Society, Inc. All rights reserved.
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
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Surface Science
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Zeitschrift fur Kristallographie - New Crystal Structures
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