About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
ESSERC 2024
Conference paper
Compact Model of Conductive-Metal-Oxide/HfOxAnalog Filamentary ReRAM Devices
Abstract
We pioneer a physics based compact model of analog filamentary conductive-metal-oxide (CMO)/HfOx ReRAM devices. Drawing from established physics-based models, we extend and customize them to explain the resistive switching mechanism in our analog ReRAM devices. Current transport in analog ReRAM devices involves carriers hopping through the localized defect states in the CMO layer, while in conventional filamentary ReRAM devices, it relies on ohmic and tunneling conduction. The model considers the ionic diffusion and drift currents as a function of the temperature dynamics and the electric field distribution. As the analog resistive switching arises from the redistribution of oxygen vacancies within a dome region in the proximity of the HfOx filament, we establish the time-dependent analytical description of the oxygen vacancy concentration in each resistance state. The compact model is validated using quasi-static voltage sweep data, resulting in a strong agreement between model predictions and experimental results.