PaperDependence of core-level photoemission spectra on overlayer growth mode: Al on InP(110)A.B. McLean, I.T. McGovern, et al.Physical Review B
PaperSurface core-level shifts for the (110) cleavage face of III-V semiconductors: InAs(110)A.B. McLeanJournal of Physics Condensed Matter
PaperLayer-by-layer electronic structure at semiconductor-metal interfaces: band gap and magnetismF.J. Himpsel, W. Drube, et al.Applied Surface Science
PaperSurface core-level binding-energy shifts for the cleaved GaP(110) surfaceA.B. McLean, R. LudekePhysical Review B
