Comment on Heterojunction valence-band-discontinuity dependence on face orientation

Abstract

In a recent Rapid Communication [Phys. Rev. B 35, 6468 (1987)], Munifoz, Sanchez-Dehesa, and Flores presented a self-consistent tight-binding analysis of valence-band offsets in GaAs/AlAs and CdTe/HgTe, and found a sizable dependence upon interface orientation for the latter system. This result differs from that obtained by the present authors for CdTe/HgTe heterojunctions. A more general study, building upon our previous heterojunction calculations, indicates in fact that independence of interface orientation is a general characteristic of a wide class of nonpolar interfaces. © 1988 The American Physical Society.