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PaperGrowth investigations of 1.3 μm GaInAsP/InP MQW laser diodes grown by chemical beam epitaxyH.P. Meier, R.F. Broom, et al.Journal of Crystal Growth
PaperMaterial and fabrication-related limitations to high-power operation of GaAs/AlGaAs and InGaAs/AlGaAs laser diodesA. JakubowiczMaterials Science and Engineering B
PaperThe effect of pressure on the band-gap energy in ordered GaInP and AlGaInP grown by MOVPET. Kobayashi, H. Kojima, et al.Journal of Physics and Chemistry of Solids
