Collective-effect state variables for post-CMOS logic applications

Abstract

Si CMOS represents a nearly optimal implementation of charge-based logic devices. To extend logic device performance significantly beyond CMOS, it may be necessary to explore collective-effect state variables. This paper analyzes logic devices based on several collective-effect state variables: collective spin polarization (ferromagnet), collective spin oscillation (spin wave), and correlated charge (exciton condensation in bi-layer structures). The benefits and challenges of these novel devices for VLSI applications are discussed.