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Optics Express
A compact waveguide-integrated Germanium-on-insulator (GOI) photodetector with 10 ± 2fF capacitance and operating at 40Gbps is demonstrated. Monolithic integration of thin single-crystalline Ge into frontend CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal. ©2010 Optical Society of America.
Christopher Kang, Christopher T. Phare, et al.
Optics Express
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IEDM 2012
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Nature Communications
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