Circular pseudo-metal oxide semiconductor field effect transistor in silicon-on-insulator analytical model, simulation, and measurements

Abstract

The pseudo-metal oxide semiconductor field effect transistor (ψ-MOSFET)is a quick method for detailed electrical characterization of bare silicon-on-insulator wafers. A recent variant consists in using circular Hg probes. A simple analytical model for the geometrical factor, which is of primary importance of circular ψ-MOSFET applications, is presented and validated by 3-D numerical simulations. Measurements on a SIMOX wafer in both accumulation and inversion are used to test the model.