Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
Chemically induced grain-boundary migration is demonstrated in polycrystalline silicon films. Growth of anomalously large grains, along with dopant depletion, is observed in P-doped polycrystalline Si films annealed at 700°C in the presence of a neighboring TiSi2 film. We propose a novel driving mechanism for migration here, an electrostatic force on the interface due to inhomogeneous dopant depletion. © 1988.
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Robert W. Keyes
Physical Review B
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009