Chemical and electrical properties of interfaces between deposited insulators and La₂CuO₄

Abstract

Metal-insulator-semiconductor capacitors have been fabricated using plasma enhanced chemical vapor deposition of Si3N4 and SiO 2 insulators on La2CuO4 semiconducting single crystals. Auger electron spectroscopy was used to characterize the insulator-semiconductor interface after annealing at several temperatures. Copper segregation and oxygen out-diffusion were observed and the Si 3N4-semiconductor interface was found to be more stable than the SiO2-semiconductor one.