R.F. Voss, R.B. Laibowitz, et al.
IEEE Transactions on Magnetics
Small metal particles (SMP) have been incorporated into a multilayered metal-insulator-semiconductor structure consisting of thermally oxidized Si, SMP, a second insulator, and a top metal electrode. The SiO2 thickness is kept < 30 Å, permitting tunneling of charge carriers between the Si and the discrete states of the SMP. The charge thus stored on the SMP causes a large, controllable hysteresis in the capacitance-voltage characteristic of the structure which is described in terms of an energy-level model. © 1971 The American Institute of Physics.
R.F. Voss, R.B. Laibowitz, et al.
IEEE Transactions on Magnetics
L. Esaki, P.J. Stiles, et al.
Physical Review Letters
P. Chaudhari, R.H. Koch, et al.
Physical Review Letters
L. Esaki, P.J. Stiles
Physical Review Letters