J.D. Baniecki, R.B. Laibowitz, et al.
Applied Physics Letters
Small metal particles (SMP) have been incorporated into a multilayered metal-insulator-semiconductor structure consisting of thermally oxidized Si, SMP, a second insulator, and a top metal electrode. The SiO2 thickness is kept < 30 Å, permitting tunneling of charge carriers between the Si and the discrete states of the SMP. The charge thus stored on the SMP causes a large, controllable hysteresis in the capacitance-voltage characteristic of the structure which is described in terms of an energy-level model. © 1971 The American Institute of Physics.
J.D. Baniecki, R.B. Laibowitz, et al.
Applied Physics Letters
C. Dimitrakopoulos, S. Purushothaman, et al.
DRC 1999
R.R. Yu, J. Doyle, et al.
VMIC 2005
R.B. Laibowitz
Applied Physics Letters