R. Ludeke, P. Lysaght, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
An analysis of silicate/Si(001) interfaces was discussed. The solid-state reaction of yttria and silicon oxynitride was used to create gate dielectrics with a direct yttrium silicate-silicon interface. The complete consumption of the underlying oxide through silicate formation during high-temperature annealing was indicated by medium-energy ion scattering. The small flat-band voltage shifts, indicating low quantities of charge without passivation steps was exhibited by silicate dielectrics.
R. Ludeke, P. Lysaght, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
M. Copel, R.M. Tromp
Physical Review B
V. Narayanan, S. Guha, et al.
Applied Physics Letters
M. Chudzik, B. Doris, et al.
VLSI Technology 2007