Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
We have observed an electric-field-induced change in the dimensionality of excitons in superlattices, from three to quasi-two dimensions. The exciton binding energy of a (40 AIS)/(40 AIS) GaAs/(GaAl)As superlattice, determined from low-temperature photocurrent experiments, increases more than 6 meV by the action of an electric field perpendicular to the superlattice layers. This sharp increase, from nearly the bulk value of GaAs at very low fields to the isolated-quantum-well value at high fields, is a direct consequence of the Stark localization of electrons and holes in superlattices. © 1990 The American Physical Society.
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
R. Ghez, J.S. Lew
Journal of Crystal Growth
Mark W. Dowley
Solid State Communications
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids