Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Small-area high-barrier Schottky diodes have a very high dynamic resistance. Consequently, special care is needed when measuring the current-voltage characteristic of such diodes. The reported observation of carrier recombination in the depletion layer of high-barrier IrSi/Si Schottky diodes at room temperature is shown to be due to instrumental loading of the diodes. Careful measurements show that carrier recombination is observed only below 200 K and is dependent on the dimension of the diode. © 1990 Springer-Verlag.
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Revanth Kodoru, Atanu Saha, et al.
arXiv
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings