A. Kerber, E. Cartier, et al.
INFOS 2003
Soft-x-ray photoemission measurements of the bulk Si 2p core level in Si/SiO2 overlayer structures show that hot-electron transport in SiO2 is essentially independent of temperature between 300 and 980 K. These results reveal a basic failure of the semiclassical Monte Carlo formalism to correctly model the strong electron-phonon interaction in SiO2 at electron energies >6 eV. The experimental data are shown to be consistent with the trends seen in quantum Monte Carlo transport calculations. © 1992 The American Physical Society.
A. Kerber, E. Cartier, et al.
INFOS 2003
E. Gusev, V. Narayanan, et al.
IEDM 2004
J.F. Morar, B.S. Meyerson, et al.
Applied Physics Letters
R. Ludeke, M.T. Cuberes, et al.
Applied Physics Letters