About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Conference paper
BEOL interconnects for 45 nm node and beyond
Abstract
Increased copper resistivity and the associated impact on RC delays in sub-45 nm node BEOL interconnects are emerging as key focus issues for future high performance microprocessor applications. Lack of readiness of advanced optical lithographic capabilities to fabricate interconnects at such fine ground rules is a limiting factor in addressing this challenge early in the R&D mode. To circumvent this obstacle and enable early learning of process, microstructural and reliability aspects of this critical interconnect issue, a hybrid lithography scheme combining e-beam and 248 nm deep ultraviolet (DUV) lithography has been employed to fabricate Cu interconnects in various low k (LK) and ultra low k (ULK) dielectrics. Preliminary results from these studies are presented.