Conference paper
Strong and flexible domain typing for dynamic E-business
Yigal Hoffner, Simon Field, et al.
EDOC 2004
Thin films of BSTO show potential for use as a capacitor dielectric for future generations of dynamic random-access memory (DRAM). This report discusses progress made in the preparation of BSTO films by liquid-source metal-organic chemical vapor deposition (LS-MOCVD) and the issues related to integrating films of BSTO into a DRAM capacitor. Mechanisms influencing specific capacitance and charge loss of BSTO films are described, as are the requirements for the electrode and barrier materials used in stacked-capacitor structures.
Yigal Hoffner, Simon Field, et al.
EDOC 2004
Charles H. Bennett, Aram W. Harrow, et al.
IEEE Trans. Inf. Theory
Apostol Natsev, Alexander Haubold, et al.
MMSP 2007
Ehud Altman, Kenneth R. Brown, et al.
PRX Quantum