Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Deposited Ni, Pd, and Pt films on n-type Si have been annealed up to 700°C. Silicide formation was monitored by MeV He4 Rutherford backscattering and glancing-angle x-ray diffraction. Barrier-height measurements were performed mainly using forward I-V characteristics. The values of the barrier heights are 0.66 eV for Ni2Si and NiSi, 0.75 eV for Pd2Si; 0.85 eV for Pt2Si, and 0.87 to 0.88 eV for PtSi. The barrier heights depend primarily on the metal deposited and not on the particular silicide phase. © 1981 The American Physical Society.
Dipanjan Gope, Albert E. Ruehli, et al.
IEEE T-MTT
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering