J.H. Stathis, R. Bolam, et al.
INFOS 2005
Ballistic electron emission spectroscopy (BEES), a technique based on the scanning tunneling microscope (STM), was used to measure Schottky barrier heights of metals on cleaved n-type GaP(110). The threshold voltages V for current detection in the semiconductor were found to be uniform to within ±0.02 V over the sample surface for any given metal on GaP. A transport model for the current I crossing the barrier, that includes both nonclassical transmission across the metal-semiconductor interface and electron scattering in the metal, yields I ∝ (V -V)5/2 near threshold. The value of V extracted from the data, which represents the Schottky barrier height, depends somewhat on the details of the transport model. Our best estimates of the Schottky barrier heights, within ±0.03 eV, are 1.07 (Mg), 1.11 (Ni), 1.14 (Bi), 1.25 (Cu), 1.31 (Ag), and 1.46 eV (Au).
J.H. Stathis, R. Bolam, et al.
INFOS 2005
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films