R.W. Gammon, E. Courtens, et al.
Physical Review B
On GaAs (111) facets grown by a slider-free LPE technique, atomically flat areas and growth steps 6.5 Å high have been verified by the novel scanning tunneling microscopy. Nomarski interference contrast micrographs give a mean distance of the steps of 6 μm. These extremely flat and structurally perfect surfaces are thus nearly free of steps in contrast to surfaces and facets previously prepared. © 1982.
R.W. Gammon, E. Courtens, et al.
Physical Review B
T.N. Morgan
Semiconductor Science and Technology
R. Ghez, M.B. Small
JES
Michiel Sprik
Journal of Physics Condensed Matter