Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
The redistribution of implanted dopant atoms during silicide formation has attracted much interest recently because of its important implications for shallow junction device technology. Ion channeling and electrical measurements have shown that dopant atoms are pushed ahead in front of the moving silicide-silicon interface during the growth of near-noble metal silicides. However, dopant redistribution has not been observed with refractory metal silicides. This unique feature of near-noble metal silicides is discussed in conjunction with the growth kinetics of these silicides. © 1983.
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
T. Schneider, E. Stoll
Physical Review B