Assessing the high-temperature capabilities of SiGe HBTs fabricated on CMOS-compatible thin-film SOI

Abstract

We quantitatively assess, for the first time, the Capabilities of SiGe HBTs fabricated on thin-film SOI for emerging high-temperature circuit applications. The dc and ac performance Of both fully-depleted and partially-depleted SiGe HBTs-on-SOI are measured up to a temperature of 330°C (for dc) and 200°C (for ac). Gummel characteristics, current gain, and output characteristics are reported. M-1 is used to investigate how collector doping affects the device behavior at high temperatures. We demonstrate that despite the harsh conditions imposed by high-temperature operation, SiGe HBTs-on-SOI maintain adequate performance for many applications for temperatures in the 200-300°C range. © 2007 IEEE.