Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
We show that at high temperatures, the columnar defects generated in YBaCuO crystals by 0.58 GeV 116Sn30+ have a natural splay of ≈10° and produce a 10 times larger persistent current density and a 10 times smaller creep rate, than well aligned tracks created by 1.08 GeV 197Sn23+, with splay of only ≈2°. © 1994.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
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Journal of Applied Mechanics, Transactions ASME
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Micro and Nano Engineering