Elena V. Shevchenko, Dmitri V. Talapin, et al.
JACS
Initially poorly conducting PbSe nanocrystal solids (quantum dot arrays or supertattices) can be chemically "activated" to fabricate n- and p-channel field effect transistors with electron and hole mobilities of 0.9 and 0.2 square centimeters per volt-second, respectively; with current modulations of about 103 to 104; and with current density approaching 3 × 104 amperes per square centimeter. Chemical treatments engineer the interparticle spacing, electronic coupling, and doping while passivating electronic traps. These nanocrystal field-effect transistors allow reversible switching between n- and p-transport, providing options for complementary metal oxide semiconductor circuits and enabling a range of low-cost, large-area electronic, optoelectronic, thermoelectric, and sensing applications.
Elena V. Shevchenko, Dmitri V. Talapin, et al.
JACS
Franz X. Redl, Charles T. Black, et al.
JACS
Stefan Kaufmann, Thilo Stöferle, et al.
Applied Physics Letters
Elena V. Shevchenko, Dmitri V. Talapin, et al.
JACS