Antiparallel pinned NiO spin valve sensor for GMR head application (invited)

Abstract

NiO antiferromagnetic material possesses certain advantages for spin valve applications and has attracted considerable attention. Some of the key advantages are its insulating properties, very high corrosion resistance, less sensitivity to composition, and its low reset temperature. This material, however, has a low blocking temperature which prevents its application to simple spin valve designs. The use of this material in spin valve structures required significant improvements in thermal stability, blocking temperature, and the spin valve design. In the present study, the blocking temperature and the blocking temperature distribution of the NiO films have been improved by depositing the films reactively using ion beam sputtering. A number of improvements in the processing method and deposition system had to be made to allow full NiO spin valve deposition for mass production. Another critical part was the use of antiparallel pinned design in place of the simple design to improve the thermal stability of the NiO spin valves as read elements at disk drive temperatures. The selection of the ferromagnetic pinned layers and the Ru spacer thickness in AP-pinned spin valves has significant impact on the behavior of the devices. These spin valves are all bottom type, NiO/PL1/Ru/PL2/Cu/Co/NiFe/Ta, where the metallic portion of the spin valve is deposited on top of the NiO AF layer. The PL1 and PL2 are ferromagnetic layers comprising NiFe and Co layers. Read elements have been made using these spin valves that delivered areal densities of 12 Gbit/in.2 These topics and other improvements which resulted in successful use of NiO spin valves as GMR heads in hard disk drives will be discussed. © 2000 American Institute of Physics.