Pouya Hashemi, Winston Chern, et al.
IEEE Electron Device Letters
This paper reports an anomalous output voltage overshoot observed during the turn-off of single short-channel thin-film silicon-on-insulator (SOI) n-MOSFET's. The parasitic floating-base bipolar device, triggered by impact ionization, is shown to be responsible for this effect. Because switching occurs over a subnanosecond time scale, the charge dynamics related to the bipolar action are essential to explain this voltage overshoot. © 1993 IEEE
Pouya Hashemi, Winston Chern, et al.
IEEE Electron Device Letters
A. Khakifirooz, Kangguo Cheng, et al.
VLSI Technology 2012
Ghavam G. Shahidi
IEEE International SOI Conference 2009
James Warnock, Ghavam G. Shahidi, et al.
IEEE Electron Device Letters