Xin Zhao, Michael R. Scheuermann, et al.
IEEE Transactions on CPMT
This paper reports an anomalous output voltage overshoot observed during the turn-off of single short-channel thin-film silicon-on-insulator (SOI) n-MOSFET's. The parasitic floating-base bipolar device, triggered by impact ionization, is shown to be responsible for this effect. Because switching occurs over a subnanosecond time scale, the charge dynamics related to the bipolar action are essential to explain this voltage overshoot. © 1993 IEEE
Xin Zhao, Michael R. Scheuermann, et al.
IEEE Transactions on CPMT
Ghavam G. Shahidi
International Journal of High Speed Electronics and Systems
Ghavam G. Shahidi, Carl A. Anderson, et al.
IEEE Transactions on Electron Devices
Ghavam G. Shahidi
IEEE International SOI Conference 2009