L.H. Allen, J.W. Mayer, et al.
Physical Review B
It was found that the increase in room-temperature resistivity caused by ion bombardment damage in YBa2Cu3O7-x could be completely recovered by annealing if the damage dose was small. A small resistivity increment (~ 0.2%), caused by a very small ion dose, annealed at room temperature. For a larger ion dose, sufficient to double the resistivity, complete recovery of room-temperature resistivity was produced by annealing at 500 °C in O2, but recovery after still larger doses was incomplete. © 1989.
L.H. Allen, J.W. Mayer, et al.
Physical Review B
F. Nava, P.A. Psaras, et al.
Journal of Materials Research
F.M. D'Heurle, J.E.E. Baglin, et al.
Journal of Applied Physics
M. Wittmer, C.-Y. Ting, et al.
Journal of Applied Physics