Lawrence Suchow, Norman R. Stemple
JES
Angle-resolved photoemission measurements for GaAs(110) have been extended to hv= 100 eV. These results show that dominant emission peaks are due to direct transitions. Weaker one-dimensional density of states features sometimes observed are due to surface umklapp/secondary cone and lifetime effects. Accurate band dispersions {A figure is presented} for all four valence bands GaAs along the [110] direction are given using simple normal emission and off-normal emission methods. Electron and hole lifetimes are directly determined. © 1979.
Lawrence Suchow, Norman R. Stemple
JES
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
K.N. Tu
Materials Science and Engineering: A