Conference paper
On the dynamic resistance and reliability of phase change memory
B. Rajendran, M.H. Lee, et al.
VLSI Technology 2008
We present a novel analytical model for the RESET operation of Phase Change Memory (PCM) that explicitly describes the dependency of the programming current on various cell dimensions and material parameters. This model also explains, for the first time, the fundamental physics behind the inverse relationship between dynamic resistance (R d) and the amplitude of the programming current.
B. Rajendran, M.H. Lee, et al.
VLSI Technology 2008
R.W. Gammon, E. Courtens, et al.
Physical Review B
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter