About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
ICEE 2016
Conference paper
Analysis of systematic and random variation of gate-induced drain leakage in silicon-germanium channel pFET
Abstract
Variability in the transistor parameters play a significant role in CMOS scaling to nanometer feature sizes. New channel materials such as silicon-germanium for pFET at 32nm and beyond are useful because of higher mobility and lower threshold voltage. However, gate-induced drain leakage (GIDL) is dominant in the total leakage and the use of germanium (Ge) may introduce additional variability sources. In this work, pre-halo Ge pre-amorphization impant (PAI) effect on systematic and random variability of GIDL and its reduction is investigated. We report that the elimination of Ge PAI from the process flow reduces GIDL and the effect of systematic variations but increases the static random GIDL variations in planar transistors based on high-k metal gate technology. However, the random GIDL variation difference associated with Ge PAI may change for scaled supply voltages.