Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs

Abstract

Ultra-fast (Iuus delay) measured threshold voltage shift (ΔVT) due to Negative Bias Temperature Instability (NBTI) in Gate All Around Stacked Nano-Sheet (GAA-SNS) Field Effect Transistors (FETs) having various length (L) and width (W) are analyzed. An enhanced, fully physical BTI Analysis Tool (BAT) is used to model the measured ΔVT stress-recovery kinetics at multiple stress bias (VGSTR) and temperature (T), with only four process dependent parameters. The impact of L and W scaling on ΔVT magnitude and its Voltage Acceleration Factor (VAF) is explained by considering variation in mechanical stress.