Analysis of marker motion in thin-film silicide formation

Abstract

A simple analysis of marker motion in the growth of a single compound layer is given. It has been applied to the growth of Ni2Si silicide between Ni thin films and Si wafers. In the silicide Ni was found to be the dominant diffusing species by the use of implanted Xe markers. The intrinsic diffusivities of Ni and Si in Ni2Si at 325 °C have been determined; DNi=1.7×10-14 cm2/sec and DSi=0.6×10-14 cm2/sec. These are the first measurements of intrinsic diffusivities in thin-film silicides.