A.W. Kleinsasser, T.N. Jackson, et al.
Applied Physics Letters
High-efficiency pGa1-xAlxAs, nGaAs solar cells are made by isothermally soaking n-GaAs substrates in an undersaturated Zn-doped GaAlAs melt. This one-step growth procedure produces a graded band gap pGa1-xAlxAs layer 0.2-0.4 μm thick. Efficiencies of 18.5% AM0 and 21.9% AM1 have been measured. © 1990.
A.W. Kleinsasser, T.N. Jackson, et al.
Applied Physics Letters
J. Woodall, H.J. Hovel
Applied Physics Letters
G.M. Blom, J. Woodall
Applied Physics Letters
H.J. Hovel, C. Lanza
IEEE T-ED