C. Cabral Jr., L. Clevenger, et al.
Applied Physics Letters
An interface-marker technique has been used to investigate the relative rates of diffusion of Si and of metal atoms during the growth of metal silicide films. The technique enables recognition of a reference plane in thin film diffusion using Rutherford backscattering, while minimizing any perturbation of the diffusion process. Examples are drawn from studies of the growth of silicides of W, Mo, Ta, Nb, V, Pd and Pt. © 1980.
C. Cabral Jr., L. Clevenger, et al.
Applied Physics Letters
T.L. Fabry, C. Simo, et al.
BBA - Protein Structure
O. Thomas, L. Stolt, et al.
Journal of Applied Physics
Eric K. Neumann, Dennis Quan
PSB 2006