D. Guckenberger, C. Schuster, et al.
Electronics Letters
This brief extends the general proof of the Ebers-Moll reciprocity theorem to include high-level injection conditions in bipolar base regions. The theorem, originally derived for the low-level case, is shown to be valid in the high-level limit, as long as the emitter injection efficiency is sufficiently high in both reciprocal configurations. © 1990 IEEE
D. Guckenberger, C. Schuster, et al.
Electronics Letters
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IEEE-SPI 2006
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IEE/LEOS Summer Topical Meetings 2001