Y. Kwark, P. Solomon, et al.
IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits 1989
This brief extends the general proof of the Ebers-Moll reciprocity theorem to include high-level injection conditions in bipolar base regions. The theorem, originally derived for the low-level case, is shown to be valid in the high-level limit, as long as the emitter injection efficiency is sufficiently high in both reciprocal configurations. © 1990 IEEE
Y. Kwark, P. Solomon, et al.
IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits 1989
F. Tong, C.-S. Li, et al.
Electronics Letters
F. Tong, C.-S. Li, et al.
IEEE Photonics Technology Letters
D.N. De Araujo, M. Cases, et al.
ECTC 2006