I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
A model is presented which features an explanation for the large deviation from stoichiometry and correspondingly high hole concentration in semiconductors containing a multivalent metal in its lowest valence state. The model is based on the assumption that cation vacancy acceptor states are associated with a band which lies below the highest filled band. The energy of vacancy formation is thereby reduced by a compensating energy, Ec, which is gained as the acceptor states are filled. Using SnTe as an example, its value of Ec is estimated. © 1965.
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
R. Ghez, J.S. Lew
Journal of Crystal Growth
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010