K.A. Chao
Physical Review B
A model is presented which features an explanation for the large deviation from stoichiometry and correspondingly high hole concentration in semiconductors containing a multivalent metal in its lowest valence state. The model is based on the assumption that cation vacancy acceptor states are associated with a band which lies below the highest filled band. The energy of vacancy formation is thereby reduced by a compensating energy, Ec, which is gained as the acceptor states are filled. Using SnTe as an example, its value of Ec is estimated. © 1965.
K.A. Chao
Physical Review B
Frank Stem
C R C Critical Reviews in Solid State Sciences
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
M. Hargrove, S.W. Crowder, et al.
IEDM 1998