R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
An anomalous correlation of gate leakage current and threshold voltage fluctuation in aggressively scaled MOSFETs is revealed and analyzed by statistical technique and a corresponding physical model is proposed. For a range of threshold voltage (Vt) design, gate leakage at fixed gate and drain bias increases with Vt before it decreases at higher V t. The behavior can be accurately explained by a trade-off between two mechanisms ("two reversed functions"): Vt roll-off effect and gate leakage current density dependence on surface potential. ©2010 IEEE.
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
John G. Long, Peter C. Searson, et al.
JES