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Applied Physics Letters
Paper

Amorphous silicon p-n junction

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Abstract

The preparation of an all-amorphous thin-film p-n junction is described. The a-Si films were produced by the glow discharge decomposition of silane, mixed with trace amounts of donor or acceptor impurities. The current-voltage characteristics of the junction were investigated in the range from 150 to 300 K.

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Applied Physics Letters

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